To the Question of Temperature Effect on the Resistivity Uniformity of Silicon Carbide Substrates

SiC substrates of 6H-SiC polytype with a diameter of 76 mm are studied in this article. The substrates are made of a single crystal, grown with the addition of vanadium as a compensating impurity. Methods of measuring resistivity of semi-insulating substrates 6Н-SiC in the range of 10⁵…10¹² Omхcm are considered. Typical maps of resistivity distribution in these substrates before and after heat treatment are given. It is established that the uniformity of resistivity distribution across the substrate improves after annealing at 1 050 °С in inert environment, and this parameter remains stable in time. The results of the study have shown that the obtained semi-insulating material can be used as a substrate for manufacturing microwave transistors with a two-dimensional AlGaN/GaN channel.

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